Abstract
Metallurgical imperfections in the recombination region such as dislocations and Ga2Te3 precipitates are shown to greatly increase the rate of degradation of the quantum efficiency of electroluminescent diodes and lasers. In addition, the degradation rate is shown to depend on the acceptor used to form thep-n junction, with beryllium-doped junctions degrading much faster than equivalent zinc-doped devices.
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References
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Kressel, H., Byer, N.E., Lockwood, H. et al. Evidence for the role of certain metallurgical flaws in accelerating electroluminescent diode degradation. Metall Trans 1, 635–638 (1970). https://doi.org/10.1007/BF02811588
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DOI: https://doi.org/10.1007/BF02811588