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Efficiency degradation of GaAs1−xPx electroluminescent diodes due to high-energy electron irradiation

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Abstract

The effects of high-energy electron bombardment on the external quantum efficiency of GaAs1−x P x electroluminescent diodes have been investigated for several alloy compositions,x. After the generation of 1017 to 1018 cm−3 defect centers in the junction region by a 1 mev electron beam, quantum efficiencies are found to degrade by 2 to 4 orders of magnitude. This drastic efficiency reduction is ascribed to the introduction of nonradiative recombination processes. After irradiation, the efficiencies of all diodes are found to have the same value of 7×10−8 at 300°K, independent of alloy composition. Furthermore, a similarity in the annealing characteristics of all diodes indicates the presence of the same types of defects throughout the alloy composition range investigated (0<x<0.5). Irradiation defects are annealed from the GaAs1−x P x diodes at lower temperatures as the phosphorus content of the alloy is increased. Finally, it is shown that annealing leads to nearly full recovery of the original diode efficiencies.

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Authors and Affiliations

  1. RCA Laboratories, Princeton, N. J.

    C. J. Nuese (Member of the Technical Staff) & H. Schade (Member of the Technical Staff)

Authors
  1. C. J. Nuese
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  2. H. Schade
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  3. D. Herrick
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Additional information

D. Herrick, formerly with RCA Laboratories, is Engineer, National Electronics, Inc., Geneva, Ill.

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Nuese, C.J., Schade, H. & Herrick, D. Efficiency degradation of GaAs1−xPx electroluminescent diodes due to high-energy electron irradiation. Metall Trans 1, 587–591 (1970). https://doi.org/10.1007/BF02811581

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