Summary
The contribution of intrinsic defects to the residual entropy of vitreous semiconductors is assumed as the basic insight for a pseudoequilibrium calculation of the free-energy at the glass-transition temperature. In particular it is shown that the concentration of IVAP-like defects in vitreous silica turns out to be in good agreement with the phenomenological value deduced from low-temperature thermo-acoustical data.
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This work was partially supported by Ministero della Pubblica Istruzione.
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Ferrari, L., Russo, G. & Tognato, R. A pseudoequilibrium approach to the formation of vacancy-bridge defects in vitreous silica. Lett. Nuovo Cimento 38, 390–392 (1983). https://doi.org/10.1007/BF02789597
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DOI: https://doi.org/10.1007/BF02789597