Skip to main content
SpringerLink
Log in

TheI–V characteristic analysis of schottky amorphous silicon solar cells

  • Published:
Journal of Electronics (China)

Abstract

The present paper introduces an experimental method for measuring the width of illuminated and short-circuited Ni/a-Si:H Schottky barriers. The current-voltage curves for the Schottky barrier solar cells under an AM1 illumination of 100 mW/cm2 are calculated by using the parameters determined by experiments. The diffusion length of holes ina-Si:H obtained from the illuminatedI–V curve is consistent with the results measured by the author with the surface photovoltage method in 1983. The factors affecting the fill factor are analysed on the basis of the calculated results. A comparison of the calculated results to the experimental ones reveals that the very low fill factor of the solar cells measured is due to series and shunt resistances rather than the low diffusion length of the holes.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. M. H. Brodsky, Amorphous Semiconductors, Springer-Verlag, Berlin, 1979, chap. 10.

    Google Scholar 

  2. Y. Kuwano, S. Tsuda and M. Ohnishi,Jpn. J. Appl. Phys.,21 (1982), 235.

    Article  Google Scholar 

  3. M. Konagai, H. Miyamoto and K. Takahashi,ibid.,,19 (1980), 1923.

    Article  Google Scholar 

  4. Xu Le and Liu Qiyi,J. Electronics (China)1 (1984), 74.

    Google Scholar 

  5. A. Catalano et al., 16 th IEEE Photovoltaic Specialists Conf., San Diego, (1982).

  6. A. R. Moore,J. Appl. Phys.,54 (1983), 222.

    Article  Google Scholar 

  7. Xu Le, D. K. Reinhard and M. G. Thompson,IEEE Trans. on ED,ED-29 (1982), 1004.

    Google Scholar 

  8. R. C. Neville, Solar Energy Conversion: The Solar Cell, Elsevier Scientific Publishing Co. New York, 1978, p. 37.

    Google Scholar 

  9. F. S. Sinencio and R. Williams,J. Appl. Phys.,54 (1983), 2757.

    Article  Google Scholar 

  10. R. S. Crandall, R. Williams and B. E. Tompkins,ibid.,,50 (1979) 5506.

    Article  Google Scholar 

  11. J. Beichler, W. Fuhs, H. Mell and H. M. Welsch,J. Non-cryst. Solids, 35/36 (1980), 587.

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Electronics, Nankai University, China

    Xu Le

Authors
  1. Xu Le
    View author publications

    You can also search for this author in PubMed Google Scholar

About this article

Cite this article

Le, X. TheI–V characteristic analysis of schottky amorphous silicon solar cells. J. of Electron.(China) 3, 140–147 (1986). https://doi.org/10.1007/BF02778931

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02778931

Keywords

Search

Navigation