Abstract
The design considerations and experimental results of compact low noise GaAs MESFET Amplifiers for UHF operation are described in this paper. The miniaturized and optimized circuits are obtained by means of special matching network and CAD technique. Both a two-stage unit at 700 MHz and a three-stage unit at 1000 MHz are fabricated on a 50×60 mm2 alumina substrate, and power gain of 29 dB and 30 dB, noise figure of 0.8 and 1.2 dB and bandwidth of 40 MHz (3 dB) and 100 MHz (1 dB) are obtained respectively. The satellite direct broadcasting TV receiver fabricated with a 700 MHz GaAs MESFET amplifier has clear pictures and good sound.
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Wenqi, W., Xinmin, Y., Zhuping, L. et al. Design and performance of compact low noise GaAs MESFET amplifiers for UHF operation. J. of Electron.(China) 3, 134–139 (1986). https://doi.org/10.1007/BF02778930
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DOI: https://doi.org/10.1007/BF02778930