Abstract
A low-noise 1.2–1.8 GHz cooled GaAs FET amplifier with mixer bias circuit is reported. The amplifier noise temperature obtained at an ambient temperature of 20 K in the frequency range of 1.2–1.7 GHz is 10K. The lowest noise temperature is 4K. The gain is about 30 dB. An automatic measuring instrument for noise temperature was designed. The noise effect of the input cable and the error analysis of the total measurement were made. The total measurement error is 2 K.
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Yiting, C. A low-noise 1.2–1.8 GHz cooled GaAs FET amplifier. J. of Electron.(China) 5, 154–159 (1988). https://doi.org/10.1007/BF02778822
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DOI: https://doi.org/10.1007/BF02778822