Abstract
In this report the diffusion of Zn into Ge is investigated. The experiments are accomplished in an evacuated and sealed quartz ampoule using Zn as the diffusion source. The relation of theX j-t and\(C_5 - \frac{l}{T}\) is given. The influence of the source temperature on the surface micrograph is investigated. It is found that using the two-temperature process a smooth surface layer can be obtained. The effect of the thickness of the SiO2 films on the mask ability for Zn is given. The leakage current can be reduced by evacuation annealing.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
G.E. Stillman, et al.,Appl. Phys. Lett.,24 (1974), 8.
Tokuzo Sukegawa, et al.,Appl. Phys. Lett.,32 (1978), 376.
C.A. Armiento, et al.,Appl. Phys. Lett.,34, (1979), 229.
T. Kaneda, et al.,Appl. Phys. Lett.,34 (1979), 866.
Author information
Authors and Affiliations
About this article
Cite this article
Guicheng, Z. Study on Zn diffusion in Ge. J. of Electron.(China) 5, 133–137 (1988). https://doi.org/10.1007/BF02778818
Issue Date:
DOI: https://doi.org/10.1007/BF02778818