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Impatt diode simulation

  • Published:
Journal of Electronics (China)

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Abstract

A set of programs is established for IMPATT (Impact Avalanche Transit Time) diode simulation. It can be used to obtain the DC small and large signal solution of the IMPATT diodes made of different materials and having different doping profiles. The physical principles, numerical methods and program design are discussed, and the half-implicit method is presented in detail. Those programs can be used to simulate all kinds of transit-time devices, but the calculation results only of the Si IMPATT Diode are given.

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Authors and Affiliations

  1. Institute of Electronics, Academic Sinica, China

    Song Wenmiao & Fang Xizeng

Authors
  1. Song Wenmiao
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  2. Fang Xizeng
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Cite this article

Wenmiao, S., Xizeng, F. Impatt diode simulation. J. of Electron. (China) 2, 152–161 (1985). https://doi.org/10.1007/BF02778809

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  • DOI: https://doi.org/10.1007/BF02778809

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