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Optical effects and microstructure of buried insulator layer formed by O+ and N+ Co-implantation

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Journal of Electronics (China)

Abstract

The microstructure and optical properties of a buried layer formed by O+ (200 keV, 1.8×1018/cm2) and N+ (180 keV, 4×1017/cm2) co-implantation and annealed at 1200°C for 2 h have been investigated by Auger electron, IR absorption and reflection spectroscopic measurements. The results show that the buried layer consists of silicon dioxide and SiOx (x<2) and the nitrogen segregates to the wings of the buried layer where it forms an oxynitride. By detail theoretical analysis and computer simulation of the IR reflection interference spectrum, the refractive index profiles of the buried layer were obtained.

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Authors and Affiliations

  1. Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, 200050, Shanghai

    Yu Yuehui, Lin Chenglu, Zhu Wenhua & Zou Shichang

  2. Structure Research Laboratory, University of Science and Technology of China, Academia Sinica, Hefei

    Lu Jiang

Authors
  1. Yu Yuehui
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  2. Lin Chenglu
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  3. Zhu Wenhua
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  4. Zou Shichang
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  5. Lu Jiang
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Yuehui, Y., Chenglu, L., Wenhua, Z. et al. Optical effects and microstructure of buried insulator layer formed by O+ and N+ Co-implantation. J. of Electron.(China) 9, 88–96 (1992). https://doi.org/10.1007/BF02778598

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  • DOI: https://doi.org/10.1007/BF02778598

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