Abstract
The fluorine ion sensitive field-effect transistor (F−-ISFET) is made by depositing very thin LaF3 film on grid of field-effect transistor with sputter method. The operating principle, measuring method and measured results of F−-ISFET are given. The measured results show that this kind of sensor has higher sensitivity, shorter response time and better linearity. On the basis of experimental results, the factor of influencing the steadiness and repeatability of F−-ISFET are conjectured.
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References
P. Bergreld,IEEE Trans. on BME,BME-17 (1970), 70–71.
K. Nagy, T. A. Fieldly, J. S. Johanuessen, Aspects of LaF3 ion selective, electrode, Budapest (1977), pp. 497–502.
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Xingjun, H. Study of F−-ISFET. J. of Electron.(China) 9, 83–87 (1992). https://doi.org/10.1007/BF02778597
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DOI: https://doi.org/10.1007/BF02778597