Abstract
The two-dimensional numerical simulation of energy transport for MOSFETs is presented, in which the effect of generation, recombination and temperature gradient of carriers on the characteristics of devices are considered. An improved mobility model is also proposed. The numerical results of micron and submicron MOSFETs show that the present model fits experiment very well.
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Yimen, Z., Jianxu, T. Computer aided analysis of carrier energy transport in mosfets. J. of Electron.(China) 9, 76–82 (1992). https://doi.org/10.1007/BF02778596
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DOI: https://doi.org/10.1007/BF02778596