Abstract
The diffusion of Zn in InP at low temperature is investigated. The experiment is accomplished in an evacuated and sealed quartz ampoule using ZneP2 as the source of Zn.
The electrical characteristics of the diffusion samples obtained by the isotemperature process and the two-temperature process have been compared. It is found that with the two-temperature process one can obtain a smooth, damageless and high-concentration surface layer. This process has been applied to fabricate InGaAsP/InP light emitting diodes, and the diodes obtained have an output power of ≥1mW with a series resistance of 2–5Ω. The behaviors of Zn diffusion in InP are discussed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
L. L. Chang and H. C. Casey,Solid-state Electronics,6 (1964), 481.
A. Hooper, B. Tuck and A. J. Baker,ibid.,67 (1974), 531.
B. Tuck and A. Hooper,J. Phys. D. Appl. Phys.,8, (1975), 1806.
E. A. Rezek, P. D. Wright and N. Holonyak, Jr.,Solid-state Electronics,21 (1978), 325.
A. Hooper and B. Tuck,ibid.,19 (1976), 513.
K. Weiser,Trans. AIME,230 (1964), 271.
Yuchi Matsushima,Appl. Phys. Lett.,35, (1979), 466.
R. S. Willams,Appl. Phys. Lett.,36 (1980), 760.
M. B. Panish,J. Electrochem. Soc.,113 (1966), 224.
P. K. Tien and B. I. Miller,Appl. Phys. Lett.,34 (1979), 701.
B. Tuck and M. D. Zahari, Inst. Phys. Conf. Ser. No. 33a (Institute of Physics, London 1977), chap. 3.
Yoshihisa Yamamoto et al.,Jap. J. Appl. Phys.,19 (1980), 121.
Author information
Authors and Affiliations
About this article
Cite this article
Guicheng, Z., Shaohua, X. & Hailong, S. A study of Zn diffusion in InP at low temperature. J. of Electron. (China) 1, 177–181 (1984). https://doi.org/10.1007/BF02778399
Issue Date:
DOI: https://doi.org/10.1007/BF02778399