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Study of the28Si(3He, α)27Si reaction at 14 MeV bombarding energy

Исследование реакции28Si(3He, α)27Si при энергии падающих частиц 14 МэВ

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Il Nuovo Cimento A (1965-1970)

Summary

The angular distributions of the3He and α-particles emitted from a silicon target bombarded with a 14 MeV doubly charged3He beam have been measured at 20 angles between 10° and 110° with a surface barrier solid-state detector. The analysis of the elastic scattering28Si3He,3He)28Si with the optical model and the analysis of the28Si(3He, α)27Si angular distributions with the DWBA theory indicate that these reactions are mainly direct in nature. Within the limitations discussed in the text, spectroscopic factors of 2.92, 0.32, 0.39 and 0.61 were assigned to the ground state and the 0.78 MeV, 0.96 MeV and 2.65 MeV excited states, respectively.

Riassunto

Si sono misurate le distribuzioni angolari dei3He e delle particelle α emesse da un bersaglio di silicio bombardato con un fascio di3He di 14 MeV con carica doppia a 20 angoli fra 10° e 110° con un rivelatore a stato solido a barriera superficiale. L’analisi dello scattering elastico28Si(3He,3He)28Si col modello ottico e l’analisi delle distribuzioni angolari28Si(3He, α)27Si con la teoria della DWBA indicano che queste relazioni sono principalmente di carattere diretto. Entro i limiti discussi nel testo, si sono assegnati i fattori spettroscopici 2.92, 0.32, 0.39 e 0.61 rispettivamente allo stato fondamentale ed agli stati eccitati di 0.78 MeV, 0.96 MeV e 2.65 MeV.

Резюме

Были измерены угловые распределения3He и α-частиц, испущенных из кремниевой мишени, которая бомбардируется пучком двукратно заряженных3He с энергией 14 МэВ. Измерения производились при 20 углах от 10° до 110° с помощью твердотельного детектора. Анализ упругого рассеяния28Si(3He,3He)28Si с помощью оптической моделии анализ угловых распределений28Si(3He, α)27Si с помощью теории DWBA указывают, что эти реакции, в основном, являются прямыми по своей природе. В рамках ограничений, рассмотренных в тексте, основному состоянию и возбужденным состояниям 0.78 МэВ, 0.96 МэВ и 2.65 МэВ приписываются следующие спекроскопические факторы 2.92, 0.32, 0.39 и 0.61.

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Wen-Ming, Lin, C.S., Song, P.S. et al. Study of the28Si(3He, α)27Si reaction at 14 MeV bombarding energy. Nuov Cim A 27, 412–420 (1975). https://doi.org/10.1007/BF02778252

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  • DOI: https://doi.org/10.1007/BF02778252

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