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Work performed at the Laboratori Nazionali di Legnaro (Padova) and Istituto ai Fisica, Ingegneria di Roma.
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Foti, G., Mea, G.d. Lattice location of boron implanted silicon after laser annealing. Lett. Nuovo Cimento 21, 89–93 (1978). https://doi.org/10.1007/BF02762794
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DOI: https://doi.org/10.1007/BF02762794