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Mechanism ofp-CdTe aging

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Abstract

We propose a mechanism of semiconductor aging accompanied by isothermal changes in the electrical conductivity of the material. The mechanism is based on the notion that aging is due to changes in the dimensions of electroactive defect associates. Experimental data forp-CdTe lend support to the proposed mechanism of aging.

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  1. Dagestan State University, ul. M. Gadzhieva 43a, Makhachkala, 367025, Dagestan, Russia

    M. A. Rizakhanov & Yu. N. Emirov

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  1. M. A. Rizakhanov
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  2. Yu. N. Emirov
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Rizakhanov, M.A., Emirov, Y.N. Mechanism ofp-CdTe aging. Inorg Mater 36, 1101–1103 (2000). https://doi.org/10.1007/BF02758924

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  • DOI: https://doi.org/10.1007/BF02758924

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