Abstract
The effect of tungsten coating on the degradation of the relaxation time of photoconductivity in Czochralski Si upon annealing was studied. It was found that the concentration of process-induced defects in tungsten-coated Si annealed at 800 and 900°C exceeded that in uncoated samples. Moreover, the annealed tungsten-coated samples showed stronger temperature dependences of the electron capture cross section of these defects, which suggests that the defects produced in these samples differ from those in uncoated Si. No additional recombination channels were found in the tungsten-coated sample annealed at 1000°C as compared to the uncoated samples. The resistivity and conductivity type of tungsten-coated Si remained unchanged upon annealing.
Similar content being viewed by others
References
Zibuts, Yu.A., Paritskii, L.G., and Ryvkin, S.M., Photoelectric Properties of Silicon Doped with Copper, Tungsten, and Platinum,Fiz. Tverd. Tela (Leningrad), 1966, vol. 8, no. 9, pp. 2549–2551.
Fujisaki Ando, T., Rozuka, Y., and Takamo, Y., Characterization of Tungsten-Related Deep Levels in Bulk Silicon Crystal,J. Appl. Phys., 1988, vol. 63, no. 7, pp. 2304–2306.
Bykovskii, Yu.A., Zuev, V.V., Kiryukhin, A.D.,et al., Negative Differential Conductivity Due to Trapping at Repulsive Centers under Double Injection Conditions,Fiz. Tekh. Poluprovodn. (Leningrad), 1972, vol. 6, no. 12, pp. 2332–2334.
Voronkova, G.M., Zuev, V.V., Kiryukhin, A.D.,et al., Spectral and Recombination Characteristics of Silicon Coated with Tungsten and Heat-Treated at High Temperatures,Neorg. Mater., 1997, vol. 33, no. 11, pp. 1285–1290 [Inorg. Mater. (Engl. Transl.), vol. 33, no. 11, pp. 1087–1091].
Bykovskii, Yu.A., Voronkova, G.M., Grigor’ev, V.V.,et al., Determination of the Recombination Parameters of Semiconductors by Microwave Measurements under Laser Excitation,Preprint of Moscow Engineering Physics Inst., Moscow, 1992, no. 007–92, pp. 1–30.
Hangleiter, A., Nonradiative Recombination via Deep Impurity Levels in Silicon: Experiment,Phys. Rev. B: Condens. Matter, 1987, vol. 35, no. 17, pp. 9149–9161.
Milnes, A.G.,Deep Impurities in Semiconductors, New York: Wiley, 1973. Translated under the titlePrimesi s glubokimi urovnyami v poluprovodnikakh, Moscow: Mir, 1977, pp. 43–44.
Yau, L.D. and Sah, C.T., Quenched-in Centers in Siliconp + n Junctions,Solid State Electron., 1974, vol. 17, no. 193, pp. 706–709.
Mesli, A. and Courcell, E., Process-Induced and Acceptor Defects in Silicon,Phys. Rev. B: Condens. Matter, 1987, vol. 36, no. 15, pp. 8049–8062.
Abakumov, V.N., Perel’, V.I., and Yassievich, I.N., Carrier Capture at Attractive Centers in Semiconductors,Fiz. Tekh. Polupwvodn. (Leningrad), 1978, vol. 12, pp. 3–21.
Abakumov, V.N. and Yassievich, I.N., Carrier Capture at Attractive Centers in Semiconductors under Optical Excitation,Zh. Eksp. Teor. Fiz., 1976, vol. 71, pp. 657–664.
Huang, J.M., Recombination Properties of Oxygen-Precipitated Silicon,J. Appl. Phys., 1986, vol. 59, no. 7, pp. 2476–2487.
Burret, A., Thibault-Desseaux, J., and Seidman, D.N., Early Stages of Oxygen Segregation and Precipitation in Silicon,J. Appl. Phys., 1984, vol. 55, no. 4, pp. 825–835.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Zuev, V.V., Kiryukhin, A.D., Kolosov, K.V. et al. Effect of tungsten coating on the relaxation time of photoconductivity in annealed Czochralski-Grown Si. Inorg Mater 36, 749–752 (2000). https://doi.org/10.1007/BF02758589
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02758589