Abstract
Porous silicon prepared with anodic currents of 5 to 30 mA/cm2 are characterized for structural and electronic properties of surface using photoluminescence, grazing angle X-ray diffraction, photoconductivity, thermally stimulated exo electron emission and work function measurements. The observed results indicate that with increasing porosity the crystallite size decreases and the amount of silicon hydride and oxide-type species increases, exhibiting a tendency similar to that of hydrogenated amorphous silicon and hydrogenated microcrystalline silicon. Free-standing powder of porous silicon, characterized by bright photoluminescence at 730 nm, showed crystallites of nanometre dimensions under the transmission electron microscope.
Similar content being viewed by others
References
Bellet D, Dolino G, Ligeon M, Blanc P and Krisch M 1992J. Appl. Phys. 71 145
Brandt M S, Fuchs H D, Stutzmann M, Weber J and Cardona M 1992Solid State Commun. 81 307
Canham L T 1990Appl. Phys. Lett. 57 1046
Fathauer R W, George T, Ksendzov A and Vasquez R P 1992Appl. Phys. Lett. 60 995
Kanemitsa Y, Uto H and Masumoto Y 1993Phys. Rev. B48 2827
Lehmann V and Gosele V 1991Appl. Phys. Lett. 58 856
Matsuda A, Kumagar K and Tanaka K 1983Jpn. J. Appl. Phys. 22 L34
Noguchi N and Sucmune I 1993Appl. Phys. Lett. 62 1429
Ochiai Y, Ookvbo N, Watanabe H, Matsui S, Mochizoki Y, Ono H, Kimura S and Ichihashi T 1992Jpn. J. Appl. Phys. 31 560
Perez J Met al 1992Appl. Phys. Lett. 61 563
Prokes S M, Carlos W E and Bermudez V M 1992Appl. Phys. Lett. 61 1447
Railkar T A, Bhide R S, Bhoraskar S V, Manorama V and Rao V J 1992J. Appl. Phys. 72 155
Rajopadhye N R and Bhoraskar S V 1986J. Mater. Sci. Lett. 5 603
Smith R L and Collins S D 1992J. Appl. Phys. 71 R1
Stutzmann M, Brandt M S, Rosenbauer M, Weber J and Fuchs H D 1993Phys. Rev. B47 4806
Tsu R, Shen H and Dutta M 1992Appl. Phys. Lett. 60 112
Vasquez R P, Fathauer R W, George T, Ksendzov A and Lin T L 1992Appl. Phys. Lett. 60 1004
Xu Z Y, Gal M and Grass M 1992Appl. Phys. Lett. 60 1375
Yon J J, Barla K, Herino R and Bomchill G 1987J. Appl. Phys. 62 1042
Zheng J P, Jiao K L, Shen W P, Anderson W A and Kwok H S 1992Appl. Phys. Lett. 64 459
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Bhoraskar, S.V., Bhave, T. & Railkar, T.A. Crystallite-size-dependent characteristics of porous silicon. Bull. Mater. Sci. 17, 523–531 (1994). https://doi.org/10.1007/BF02757898
Issue Date:
DOI: https://doi.org/10.1007/BF02757898