Abstract
We report Raman scattering and photoluminescence studies on porous silicon film formed on n-type silicon. The Raman spectra over the sample surface exhibit considerable variation whereas the photoluminescence spectra are practically identical. Our results indicate that, well inside the film surface, it consists of spherical nanocrystals of typical diameter ≈ 100Å, while on the edge these nanocrystals are ⩾ 300Å. We further observe that there is no correlation between the photoluminescence peak position and the nanocrystal diameter. This suggests that the origin of the photoluminescence is due to radiative recombination between defect states in the bulk as well as on the surface of the nanocrystal.
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Brandt M S, Fuchs H D, Stutzmann M, Weber J and Cardona M 1992Solid State Commun. 81 307
Campbell I H and Fauchet P M 1986Solid State Commun. 58 739
Canham L T 1990Appl. Phys. Lett. 57 1046
Dolling G 1963Inelastic neutron scattering from solids and liquids (Vienna: IAEA) Vol.11 pp 37–48
Halimaoui A, Oules C, Bomchil G, Bsiesy A, Gaspard F, Herino R, Ligeon M and Muller F 1991Appl. Phys. Lett. 59 304
Imai K 1981Solid State Electron. 24 159
Koch F 1993Preprint, MRS Meeting, USA
Lee H Jet al 1993Appl. Phys. Lett. 62 855
Lehmann V and Gosele U 1991Appl. Phys. Lett. 58 856
Munder H, Andrzejak C, Berger M G, Klemradt U, Luth H, Herino R and Ligeon M 1992Thin Solid Films 221 27
Prokes S M, Glembocki O J, Bermudez V M, Kaplan R, Fridersdorf L E and Searson P C 1992Phys. Rev. B45 13788
Proot J P, Delerue C and Allan G 1992Appl. Phys. Lett. 61 1948
Richter H, Wang Z P and Ley L 1981Solid State Commun. 39 625
Roy A P and Bansal M L 1988Indian J. Pure Appl. Phys. 26 218
Smith R L and Collins S D 1992J. Appl. Phys. 71 R1
Sood A K, Jayaram K and Muthu D V S 1992J. Appl. Phys. 72 4963
Stutzmann M, Weber J, Brandt M S, Fuchs H D, Rosenbauer M, Deak P, Hopner A and Breitschwerdt A 1992Adv. Solid State Phys. 32 179
Sui Z, Leong P P, Herman I P, Higashi G S and Temkin H 1992Appl. Phys. Lett. 50 2086
Tsai Cet al 1992Appl. Phys. Lett. 60 1700
Uhlir A 1956Bell. Syst. Tech. J. 35 333
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Deb, S.K., Mathur, N., Roy, A.P. et al. Raman scattering and photoluminescence study of porous silicon formed on n-type silicon. Bull. Mater. Sci. 17, 505–511 (1994). https://doi.org/10.1007/BF02757896
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DOI: https://doi.org/10.1007/BF02757896