Abstract
Oxygen out-diffusion during cooling and heating ofin situ grown {ie685-1} (YBCO) films in low oxygen pressure used during growth by pulsed laser deposition was studied in the temperature range 700−450°C usingin situ resistance measurements. Results indicate that irrespective of the number of cooling and heating cycles seen by the films, full oxygenation of the films can be realized by the final cooling from the growth temperature in 500 torr oxygen pressure. This result has been successfully used to sequentially grow high quality YBCO films on both sides of LaAlO3 substrates. These films have been used for the fabrication of X-band microstrip resonators with superconducting ground plane.
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Pai, S.P., Pinto, R., Apte, P.R. et al. Oxygen incorporation duringin situ growth of YBCO films on both sides of substrates. Bull. Mater. Sci. 16, 685–692 (1993). https://doi.org/10.1007/BF02757663
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DOI: https://doi.org/10.1007/BF02757663