Skip to main content
SpringerLink
Log in

Sputter deposition technology as a materials engineering

  • Published:
Bulletin of Materials Science Aims and scope Submit manuscript

Abstract

Sputter deposition is currently being widely used in the microelectronics industry for the production of silicon integrated circuits. Recently interest has been focused on sputter deposition as a new materials processing technique. The highly energetic sputtered atoms enhance crystal growth and/or sintering during film growth. This results in lowering of the growth temperature of high temperature materials including cubic diamonds. Single crystals of complex ceramics materials could be prepared by sputter deposition through epitaxial growth process. Atomically controlled deposition using multi-target sputter enables to make man-made superlattice including high-T C superconductors of layered perovskite. At present sputter deposition is one of key materials technologies for the coming century.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  • Adachi H, Kawaguchi T, Setsune K, Ohji K and Wasa K 1983Appl. Phys. Lett. 42 867

    Article  CAS  Google Scholar 

  • Adachi H, Mitsuyu T and Wasa K 1986J. Appl. Phys. 60 736

    Article  CAS  Google Scholar 

  • Adachi H, Kohiki S, Setsune K, Mitsuyu T and Wasa K 1988Jpn. J. Appl. Phys. 27 L1883

    Google Scholar 

  • Adachi H and Wasa K 1990Mater. Res. Soc. Symp. Proc. 200 103

    CAS  Google Scholar 

  • Aisenberg S and Chabot R 1971J. Appl. Phys. 42 2953

    Article  CAS  Google Scholar 

  • Behrisch R (ed.) 1981Sputtering by particle bombardment I (Berlin: Springer Verlag)

    Google Scholar 

  • Carrano J, Sudhama C, Lee J and Miller W 1989International electron device meeting proc., Washington DC, IEDM89-255

  • Chopra K L 1969Thin film phenomena (New York: McGraw Hill)

    Google Scholar 

  • Eckstein J Net al 1989J. Vac. Sci. Technol. B7 319

    Google Scholar 

  • Fujita J, Tatsumi T, Yoshitake T and Igarashi H 1989Appl. Phys. Lett. 54 2364

    Article  CAS  Google Scholar 

  • Haertling G H and Land C E 1971J. Am. Ceram. Soc. 54 1

    Article  CAS  Google Scholar 

  • Kitabatake M and Wasa K 1985J. Appl. Phys. 58 1693

    Article  CAS  Google Scholar 

  • Kitabatake M and Wasa K 1988J. Vac. Sci. Technol. A6 1793

    Google Scholar 

  • Maissel L and Glang R (eds) 1970Handbook of thin film technology (New York: McGraw Hill)

    Google Scholar 

  • Matsushima T, Ichikawa Y, Adachi H, Setsune K and Wasa K 1990Solid State Commun. 76 1201

    Article  CAS  Google Scholar 

  • Mizuno K, Higashino H, Setsune K and Wasa K 19892nd Inter. symp. on superconductivity, proc. ISS89

  • Nakagawa T, Yamaguchi J and Hamakawa Y 1982Jpn. J. Appl. Phys. 21 655

    Article  CAS  Google Scholar 

  • Oikawa M and Tada K 1989Appl. Phys. Lett. 29 491

    Article  Google Scholar 

  • Otsubo S, Maeda T, Minamaikawa T, Yonezawa Y, Morimoto A and Shimizu T 1990Jpn. J. Appl. Phys. 29 L133

  • Setsune K, Mitsuyu T, Yamazaki O and Wasa K 1983Ultrason. symp. proc., Atlanta, p. 467

  • Tabata H, Kawai T, Kanai M, Murata O and Kawai S 1989Jpn. J. Appl. Phys. 28 L823

    Google Scholar 

  • Wasa K and Hayakawa S 1976 Jpn. Patent 51-84840

  • Wasa K, Tohoda T, Kasahara Y and Hayakawa S 1979Rev. Sci. Instrum. 50 1084

    Article  CAS  Google Scholar 

  • Wasa K 1981 U.S. Patent 4, 288, 307

    Google Scholar 

  • Wasa K, Yamazaki O, Adachi H, Kawaguchi T and Setsune K 1984J. Lightwave Technol. LT-2 710

    Article  CAS  Google Scholar 

  • Wasa K, Adachi H, Hirochi K, Ichikawa Y, Matsushima T and Setsune K 1991J. Mater. Res. 6 1595

    Article  CAS  Google Scholar 

  • Wasa K and Hayakawa S 1991Handbook of sputter deposition technology (New Jersey: Noyes)

    Google Scholar 

  • Wehner G K 1955Advances in electronics and electron physics (New York: Academic Press) Vol. VII

    Google Scholar 

  • Yamazaki O, Mitsuyu T and Wasa K 1980IEEE Trans. Sonics and Ultrason.SU-27 369

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Matsushita Electric Industries, 570, Yagumonakamachi, Moriguchi, Japan

    Kiyotaka Wasa

Authors
  1. Kiyotaka Wasa
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Wasa, K. Sputter deposition technology as a materials engineering. Bull. Mater. Sci. 16, 643–663 (1993). https://doi.org/10.1007/BF02757660

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02757660

Keywords

Search

Navigation