Growth and characterization of laser-deposited Ag-doped YBa₂Cu₃O_7−x thin films on bare sapphire

Abstract

Microstructural and superconducting properties of YBa₂Cu₃O_7−x thin films grownin situ on bare sapphire by pulsed laser deposition using YBa₂Cu₃O_7−x targets doped with 7 and 10 wt% Ag have been studied. Ag-doped films grown at 730°C on sapphire have shown very significant improvement over the undoped YBa₂Cu₃O_7−x films grown under identical condition. A zero resistance temperature of 90 K and a critical current density of 1·2×10⁶ A/cm² at 77 K have been achieved on bare sapphire for the first time. Improved connectivity among grains and reduced reaction rate between the substrate and the film caused due to Ag in the film are suggested to be responsible for this greatly improved transport properties.