Abstract
ZnSe-GaAs heterovalent heterostructures were fabricated by metalorganic vapour phase epitaxy and characterized structurally and electrically. A study on growth behaviour of GaAs on ZnSe revealed that either the 2-dimensional or the 3-dimensional growth mode may occur depending on the growth conditions. This growth behaviour is applied to the construction of low-dimensional structures. Successful fabrication of quantum well structures and GaAs islands buried into ZnSe is demonstrated by means of X-ray diffraction and transmission electron microscopy. The electrical properties of the heterostructures are also described.
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Funato, M., Fujita, S. & Fujita, S. MOVPE growth and characterization of ZnSe-GaAs heterovalent heterostructures. Bull. Mater. Sci. 18, 343–359 (1995). https://doi.org/10.1007/BF02749766
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DOI: https://doi.org/10.1007/BF02749766