Abstract
Dielectric constant, dielectric loss and conductivity of Bi4(GeO4)3 and Bi4(SiO4)3 single crystals have been measured as a function of frequency and in the temperature range from liquid nitrogen temperature to 400° C. The values of the static dielectric constant at room temperature are 16·4 and 13·7 for Bi4(GeO4)3 and Bi4(SiO4)3 respectively. The plots of log (σ) against reciprocal temperature at different frequencies of these crystals merge into a straight line beyond 250°C and the activation energies calculated in this region are found to be 0·95 eV and 1·2 eV for Bi4(GeO4)3 and Bi4(SiO4)3 respectively.
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Sirdeshmukh, L., Reddy, Y.R. Dielectric properties of Bi4(GeO4)3 and Bi4(SiO4)3 . Bull. Mater. Sci. 2, 61–66 (1980). https://doi.org/10.1007/BF02748536
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DOI: https://doi.org/10.1007/BF02748536