Abstract
Thermoelectric power (α) and electrical resistivity (ρ) are reported for the system Cu1+x Sn x Fe2−2x O4 (wherex=0·05, 0·1, 0·15, 0·2 and 0·3) from room temperature to 800 K. The compositions withx=0·05 and 0·2 exhibitn-type conduction while the compositions withx=0·1 and 0·15 showp- ton-type conduction change after 423 K. The conduction at low temperature (i.e. < 400 K) is due to impurities, while at higher temperature (i.e. > 400 K), it is due to polaron. Hopping conduction phenomenon for the present system has been explained on the basis of localized model of electrons. Additional localization may arise due to Sn4+ + Fe2+ stable pairs at B-site and Cu1+ + Fe3+ pair at A-site.
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Patil, B.L., Sawant, S.R., Suryavanshi, S.S. et al. Conduction mechanism in Sn4+ substituted copper ferrite. Bull. Mater. Sci. 16, 267–271 (1993). https://doi.org/10.1007/BF02746036
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DOI: https://doi.org/10.1007/BF02746036