Abstract
Single phase copper indium disulphide (CuInS2) thin films of thickness between 60 nm and 650 nm with the chalcopyrite structure are obtained on NaCl and glass substrates by flash evaporation. The films were found to ben-type semiconducting. The influence of the substrate temperature on the crystallinity, conductivity, activation energy and optical band gap was studied. An improvement in the film properties could be achieved up to a substrate temperature of 523 K at a molybdenum source temperature of 1873 K.
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Agarwal, M.K., Patel, P.D., Chaki, S.H. et al. Growth and properties of CuInS2 thin films. Bull Mater Sci 21, 291–295 (1998). https://doi.org/10.1007/BF02744955
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DOI: https://doi.org/10.1007/BF02744955