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Electron cyclotron resonance (ECR) plasma-enhanced chemical vapour deposition of silicon dioxide on strained-SiGe films using tetraethylorthosilicate

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Abstract

Silicon dioxide films on strained Si1−x Ge x have been deposited by electron cyclotron resonance (ECR) plasma-enhanced chemical vapour deposition technique using tetraethylorthosilicate (TEOS) at room temperature. The deposition rate as a function of time and substrate temperature has been studied. MOS capacitors fabricated using deposited oxides have been used to characterize the electrical properties of silicon dioxide films. Deposited oxide film shows its suitability for microelectronic applications.

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Authors and Affiliations

  1. Department of Electronics and ECE, Indian Institute of Technology, 721 302, Kharagpur, India

    L K Bera, S K Ray, H D Banerjee & C K Maiti

  2. Department of Physics, Indian Institute of Technology, 721 302, Kharagpur, India

    S K Ray

  3. Materials Science Centre, Indian Institute of Technology, 721 302, Kharagpur, India

    H D Banerjee

Authors
  1. L K Bera
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  2. S K Ray
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  3. H D Banerjee
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  4. C K Maiti
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Bera, L.K., Ray, S.K., Banerjee, H.D. et al. Electron cyclotron resonance (ECR) plasma-enhanced chemical vapour deposition of silicon dioxide on strained-SiGe films using tetraethylorthosilicate. Bull Mater Sci 21, 283–286 (1998). https://doi.org/10.1007/BF02744953

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  • DOI: https://doi.org/10.1007/BF02744953

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