Pulsed laser deposition of indium antimonide
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Single crystalline oriented films of indium antimonide have been grown on cadmium telluride substrates by the pulsed laser deposition technique. The films were (111) oriented which is the substrate orientation. The composition of the grown films were found to deviate from that of the target owing to loss of antimony during evaporation. This deviation from stoichiometry led to film-substrate reaction, resulting in mixed interface. The antimony deficiency in the films were controlled by correcting the stoichiometry, which led to avoiding mixed interfaces. The stoichiometric films showed good surface morphology and well defined sharp interfaces. The IR transmission spectrum showed sharp band to band absorption and effective detection in the MWIR.
KeywordsPLD indium antimonide morphology interface In2Te3 InTe
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- Cheung J T and Magee T 1983J. Vac. Sci. Technol. A1 1604Google Scholar
- Goponov S V, Luskin B M and Salaschenko N N 1980Sov. Phys. Semicond. 14 873Google Scholar
- Rabin B, Scharager C, Hage-Ali M, Stiffert P, Wald F V and Bell R O 1980Phys. Status Solidi A62 237Google Scholar
- Suma Gurumurthy, Rao K S R K, Sreedhar A K, Bhat H L, Sundersheshu B, Bagai R K and Vikram Kumar 1994Bull. Mater. Sci. 17 1057Google Scholar
- Venkataraghavan R, Rao K S R K, Sreedhar A K and Bhat H L 1996J. Appl. Phys. (Communicated)Google Scholar
- van Welzenis R G, van Setten F M and Schannen O F Z 1991Appl. Phys. A52 19Google Scholar
- Williams G M, Whitehouse C R, Chew N G, Blackmore G W and Cullis A G 1985J. Vac. Sci. Technol. B3 704Google Scholar