Bulletin of Materials Science

, Volume 19, Issue 1, pp 123–129 | Cite as

Pulsed laser deposition of indium antimonide

  • R Venkataraghavan
  • K M Satyalakshmi
  • K S R K Rao
  • A K Sreedhar
  • M S Hegde
  • H L Bhat
Proceedings Of The Workshop On ‘Hydrogen In Materials’, New Delhi, 1994

Abstract

Single crystalline oriented films of indium antimonide have been grown on cadmium telluride substrates by the pulsed laser deposition technique. The films were (111) oriented which is the substrate orientation. The composition of the grown films were found to deviate from that of the target owing to loss of antimony during evaporation. This deviation from stoichiometry led to film-substrate reaction, resulting in mixed interface. The antimony deficiency in the films were controlled by correcting the stoichiometry, which led to avoiding mixed interfaces. The stoichiometric films showed good surface morphology and well defined sharp interfaces. The IR transmission spectrum showed sharp band to band absorption and effective detection in the MWIR.

Keywords

PLD indium antimonide morphology interface In2Te3 InTe 

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Copyright information

© The Indian Academy of Sciences 1996

Authors and Affiliations

  • R Venkataraghavan
    • 1
  • K M Satyalakshmi
    • 1
    • 2
  • K S R K Rao
    • 1
  • A K Sreedhar
    • 1
  • M S Hegde
    • 1
    • 2
  • H L Bhat
    • 1
  1. 1.Department of PhysicsIndian Institute of ScienceBangaloreIndia
  2. 2.Solid State and Structural Chemistry UnitIndian Institute of ScienceBangaloreIndia

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