Abstract
The solution gas interface technique by which thin films of Bi2−x As x S3 were deposited is described in this paper. The semiconducting properties of the interface grown Bi2−x As x S3 thin films are studied. The optical absorption, dark resistivity and thermoelectric power of the films were studied and results are reported.
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Pawar, S.H., Bhosale, P.N. Preparation and properties of Bi2−x As x S3 thin films by solution-gas interface technique. Bull. Mater. Sci. 8, 427–431 (1986). https://doi.org/10.1007/BF02744157
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DOI: https://doi.org/10.1007/BF02744157