Abstract
Thin films of CuInSe2 have been evaporated onto glass substrates by flash evaporation. The as-deposited films are amorphous and annealing in selenium atmosphere produces polycrystalline films. The films were characterized bytem and x-ray diffraction techniques. The optical absorption of the films shows three energy gaps of 1·03, 1·07 and 1·22 eV. The crystal field and spin-orbit splitting are thus found to be 0·04 eV and 0·16 eV respectively. The percentaged-character of the valence band states is ∼35%. The Arrhenius plot of electrical conductivity of films showed impurity ionization ofE A = 75 meV.
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Sridevi, D., Prasad, J.J.B. & Reddy, K.V. Preparation and characterization of flash-evaporated CuInSe2 thin films. Bull. Mater. Sci. 8, 319–324 (1986). https://doi.org/10.1007/BF02744139
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DOI: https://doi.org/10.1007/BF02744139