Liquid phase epitaxy growth of GaAs: Si by temperature difference method

Abstract

The LPE growth of a horizontal sliding system by temperature difference method is used to grow single and multiple layers of GaAs compounds from dilute solution. The weight ratio of Si to Ga solvent is 10⁻⁴ wt%. The growth rate, surface morphology, carrier concentration and Hall mobility are studied. Relationship between the above properties and the growth temperature and temperature different (ΔT) is also discussed. In general, the present results appear quite consistent with the diffusion limited model. The growth rate can be precisely controlled. The stability of the solid-liquid interface can be obtained in the epilayer growth at a constant temperature of the system which can avoid the effect of constitutional supercooling. Under proper control, a perfect epilayer and multiple smooth layers can be obtained.