Abstract
Thin films of amorphous germanium were deposited in an oxygen atmosphere.dc conductivity results are interpreted considering the possibility of the formation of Ge-O bonds. The density of states was determined. Results of conductivity are interpreted using the Davis-Mott model. Change in conductivity in annealed films of V-a-Ge and O-a-Ge is also reported.
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Bhale, K.K., Shah, S.S. Effect of annealing and oxygenation on the DC conductivity of amorphous germanium. Bull. Mater. Sci. 5, 175–178 (1983). https://doi.org/10.1007/BF02744031
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DOI: https://doi.org/10.1007/BF02744031