Abstract
The layer type MoSe x Te2−x (0 ≤x ≤ 2) have been grown in single crystalline form by chemical vapour transport technique using bromine as the transporting agent. The electrical resistivity and Hall mobility perpendicular to thec-axis of the crystals were measured at room temperature. The variation of the Seeback coefficient with temperature was also investigated.
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Agarwal, M.K., Patel, P.D. & Joshi, R.M. Transport properties of MoSe x Te2−x (0 ≤x ≤ 2) single crystals. Bull. Mater. Sci. 9, 337–341 (1987). https://doi.org/10.1007/BF02744015
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DOI: https://doi.org/10.1007/BF02744015