Summary
The valuence density of states of the III–VI layer compounds GaS, GaSe and InSe is discussed on the basis of the available ultraviolet photoelectron spectra. A new set of X-ray photoelectron spectra, measured homogeneously on the three compounds, are presented and the experimental features are interpreted on the basis of the valence band density of states, calculated by using the band structures obtained in the first paper of this series with the overlap-reduced tight-binding method. The overall similarity of the experimental spectra agrees with the theoretical findings. The dependence of less bound states on the polarization of the exciting radiation is understood on the basis of the computed energy levels. The fine structure shown by some UPS peaks is interpreted, and some experimental features are shown to depend essentially on the interaction between adjacent layers.
Riassunto
Si presenta una nuova serie di spettri di emissione fotoelettronica per irraggiamento X, misurati in modo omogeneo sui semiconduttori lamellari GaS, GaSe ed InSe. I risultati sono interpretati sulla base della densità degli stati di valenza, calcolata usando le strutture a bande riportate nel lavoro precedente di questo stesso fascicolo. La somiglianza degli spettri tra loro è giustificata dalla teoria. La dipendenza degli stati meno legati dalla polarizzazione della radiazione di eccitazione è spiegata sulla base dei livelli di energia calcolati. Si interpreta anche la struttura fine osservata in alcuni picchi UPS; si dimostra inoltre che alcune caratteristiche degli spettri dipendono essenzialmente dall'interazione tra strati adiacenti.
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Antonangeli, F., Piacentini, M., Balzarotti, A. et al. Electronic properties of the III–VI layer compounds GaS, GaSe and InSe. II: Photoemission. Nuov Cim B 51, 181–197 (1979). https://doi.org/10.1007/BF02743705
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DOI: https://doi.org/10.1007/BF02743705