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Energy spectrum of direct excitons in wurtzite-type semiconductors

ЁНЕРгЕтИЧЕскИИ спЕк тР пРьМых ЁксИтОНОВ В пОлУпРОВОДНИкАх тИп А ВУРтцИтА

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Il Nuovo Cimento B (1971-1996)

Summary

We investigate the energy levels of direct excitons in wurtzite-type materials taking into full account the anisotropy and the degeneracy of the valence bands together with the anisotropy of the dielectric tensor. We show that, after a proper similarity transformation of the exciton Hamiltonian, the problem can be solved by means of a method introduced for the case of direct and indirect excitons in cubic (diamond and zincblende) semiconductors. The binding energies of the 1s and 2s exciton states originating from the γ9,gG7, gG7 valence subbands are given by analytical expressions. Results are presented for CdS and CdSe and the agreement with available experimental data is good.

Riassunto

Si studiano i livclli di energia degli eccitoni diretti in materiali del tipo della wurtzitc tenendo pienamente conto dell’anisotropia o della degenerazione delle bande di valenza cd anche dell’anisotropia del tensore dielettrico. Si mostra ehe, dopo un’opportuna trasformazione di similarità dell’hamiltoniana dell’eccitone, si puÒ risolvere il problema col metodo introdotto per il caso degli eccitoni diretti ed indiretti in semiconduttori cubici (diamante e zincoblenda). Le energie di legame degli stati eccitonici Is e 2s che si originano dalle sottobande di valenza γ9, γ7, γ7 sono dato da espressioni analitiche. Si presentano risultati per CdS e CdSe e si ottiene un buon accordo con i dati sperimentali disponibili.

РЕжУМЕ

Мы ИсслЕДУЕМ ЁНЕРгЕт ИЧЕскИЕ УРОВНИ ЁксИтОНОВ В МАтЕРИАл Ах тИпА ВУРтцИтА, пОлНОстьУ У ЧИтыВАь АНИжОтРОпИУ И ВыРОжДЕННОсть ВАлЕН тНых жОН, ВМЕстЕ с АНИжОтРОпИЕ И ДИЁлЕктРИЧЕскОгО т ЕНжОРА. Мы пОкАжыВАЕМ, ЧтО пОслЕ НАДлЕжАЩЕгО пРЕОБРАжОВАНИь пОДО БИь ЁксИтОННОгО гАМИ льтОНИАНА, ЁтА пРОБлЕМА МОжЕт Быть РЕшЕНА, Исп ОльжУь МЕтОД, пРЕДлОж ЕННыИ Дль слУЧАь пРьМых И НЕпРь Мых ЁксИтОНОВ В кУБИЧЕск Их (АлМАж И цИНкОВАь ОБ МАНкА) пОлУпРОВОДНИкАх. пРИ ВОДьтсь АНАлИтИЧЕскИЕ ВыРАж ЕНИь Дль ЁНЕРгИИ сВьж И 1s И 2s ЁксИтОННых сОстОьНИ И, ВОжНИкАУЩИх Иж г9, г7, г7 ВАлЕНтНых сУ БжОН. пРИВОДьтсь РЕжУ льтАты Дль CdS И CdSe, кОтОРыЕ хОРОшО сОглА сУУтсь с ИМЕУЩИМИсь ЁкспЕРИМЕНтАльНыМИ ДАННыМИ.

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This work was supported in part by the Advanced Eesearch Projects Agency under Contract HC 15-67-C-0221.

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Lipari, N.O. Energy spectrum of direct excitons in wurtzite-type semiconductors. Nuov Cim B 8, 406–416 (1972). https://doi.org/10.1007/BF02743669

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  • DOI: https://doi.org/10.1007/BF02743669

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