Skip to main content
SpringerLink
Log in

Electrical properties ofp-type GaSe

  • Published:
Il Nuovo Cimento B (1971-1996)

Summary

Systematic resistivity and Hall-mobility measurements have been carried out over the temperature range (77÷850) K onp-type GaSe single crystals, grown from the melt in different conditions by the Bridgman-Stockbarger method. The correlation between electrical properties and growth conditions has been investigated for various crystal ingots. From the analysis of the experimental results the energies and the concentrations of the dominant acceptor levels have been obtained together with an estimate of the density-of-state effective mass of conduction and valence bands. Five acceptor levels have been observed at energiesE 1=31 meV,E 2=(50÷70) meV,E 3=(140÷160) meV,E 4=(180÷210) meV,E 5=(280÷310) meV; some of these have been attributed to chemical interaction between GaSe and silica ampoules during growth. Density-of-state effective masses have been evaluated to bem h=0.5m 0 andm e=m 0. Finally, Hall-mobility data have been analysed according to a theoretical model proposed by Schmid. From this analysis it has been found an optical-phonon energy ℏω = 12 meV, a coupling constant valueg 2=0.24 and a deformation potential for the valence band ε=5.2 eV/Å.

Riassunto

Sono state eseguite misure sistematiche di resistività e mobilità Hall, nell'intervallo di temperatura (77÷850) K, su monocristalli di GaSe di tipop, cresciuti in condizioni differenti dal fuso con il metodo di Bridgman-Stockbarger. Sono state prese in esame le correlazioni tra proprietà elettriche e condizioni di crescita dei vari lingotti. Dalla analisi dei risultati sperimentali si sono ricavate le energie e le concentrazioni dei livelli accettori dominanti, insieme ad una stima della massa effettiva per la banda di conduzione e quella di valenza. Sono stati trovati i seguenti livelli:E 1=31 meV,E 2=(50÷70) meV,E 3=(140÷160) meV,E 4=(180÷210) meV,E 5=(280÷310) meV. Alcuni di questi lievelli sono stati attribuiti all'interazione chimica, durante la crescita, tra GaSe e fiala di quarzo. Per le masse effettive si è trovatom h=0.5m 0 edm e=m 0. Infine, i dati della mobilità Hall sono stati analizzati secondo il modello proposto da Schmid. Da questa analisi si sono trovati i seguenti valori: ℏω = 12 meV, per l'energia dei fononi ottici,g 2=0.24 per la costante di accoppiamento ed ε=5.2 eV/Å per il potenziale di deformazione per la banda di valenza.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. J. L. Brebner andR. Mooser:Proceedings of the International Conference on Luminescence (Budapest, 1966), p. 1933.

  2. G. A. Akhundov andG. Bagirov:Sov. Phys. Semiconductors,415, 805 (1970).

    Google Scholar 

  3. J. P. Voitchovsky: Thesis, EPFL, Lausanne (1973).

  4. Ph. Schmid, J. P. Voitchovsky andA. Mercier:Phys. Stat. Sol.,21 (a), 443 (1974).

    Article  ADS  Google Scholar 

  5. R. Fivaz andE. Mooser:Phys. Rev.,163, 743 (1967).

    Article  ADS  Google Scholar 

  6. C. Tatsuyama, C. Hamaguchi, H. Tomita andI. Nakai:Jap. Journ. Appl. Phys.,10, 1698 (1971).

    Article  ADS  Google Scholar 

  7. A. M. Mancini, C. Manfredotti, R. Murri, A. Quirini, A. Rizzo andL. Vasanelli:Proc. IEEE, NS.23, 189 (1976).

    Google Scholar 

  8. C. Manfredotti, A. Rizzo, C. De Blasi, S. Galassini andL. Ruggiero:Journ. Appl. Phys.,46, 4531 (1975).

    Article  ADS  Google Scholar 

  9. Ph. Schmid:Nuovo Cimento,21 B, 258 (1974).

    Article  ADS  Google Scholar 

  10. V. L. Cardetta, A. M. Mancini andA. Rizzo:Journ. Cryst. Growth,16, 183 (1972).

    Article  ADS  Google Scholar 

  11. V. L. Cardetta, A. M. Mancini, R. Murri andL. Vasanelli: Rept. CSATA FA/CM/106 (1971).

  12. C. Manfredotti, R. Murri, A. Rizzo, L. Vasanelli andG. Micocci:Phys. Stat. Sol.,29 (a), 475 (1975).

    Article  ADS  Google Scholar 

  13. G. Ottaviani, L. Canali, F. Nava, Ph. Schmid, E. Mooser, R. Minder andI. Zschokke:Sol. State Comm.,14, 933 (1974).

    Article  ADS  Google Scholar 

  14. C. Manfredotti, R. Murri, A. Rizzo andL. Vasanelli: to be published.

  15. R. Fivaz:Journ. Phys. Chem. Sol.,28, 839 (1967).

    Article  ADS  Google Scholar 

  16. V. A. Gadzhiev, V. J. Sokolov, H. K. Subashiev andB. K. Tagiev:Sov. Phys. Sol. State,12, 1061 (1970).

    Google Scholar 

  17. R. M. A. Lieth, C. W. M. van der Heyden andJ. W. M. van Kessel:Journ. Cryst. Growth,5, 251 (1969).

    Article  ADS  Google Scholar 

  18. F. I. Ismailov, G. A. Akhundov andO. R. Vermich:Phys. Stat. Sol.,17, K 237 (1966).

    Article  ADS  Google Scholar 

  19. R. H. Tredgold andA. Clark:Sol. State Comm.,7, 1519 (1969).

    Article  ADS  Google Scholar 

  20. G. B. Abdullaev, E. S. Guseinova andB. G. Tagiev:Phys. Stat. Sol.,16, 205 (1966).

    Article  ADS  Google Scholar 

  21. G. A. Akhundov andI. G. Aksyanov:Opt. Spectr.,19, 172 (1965).

    ADS  Google Scholar 

  22. A. C. Smith, J. F. Ianac andR. B. Odler:Electronic Conduction in Solids (New York, N. Y., 1967).

  23. G. Fisher andL. Brebner:Journ. Phys. Chem. Sol.,23, 1363 (1962).

    Article  ADS  Google Scholar 

  24. V. A. Gadzhiev, E. S. Guseinova andB. G. Tagiev:Phys. Stat., Sol.,5 (a), 309 (1971).

    Article  ADS  Google Scholar 

  25. T. J. Wieting andJ. L. Verble:Phys. Rev. B,5, 1473 (1972).

    Article  ADS  Google Scholar 

  26. Ph. Schmid andJ. P. Voitchovsky:Phys. Stat. Sol.,65 (b), 249 (1974).

    Article  ADS  Google Scholar 

  27. M. Schlüter:Nuovo Cimento,13 B, 313 (1973).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Istituto di Fisica dell'Università, Bari

    C. Manfredotti, A. M. Mancini, R. Murri, A. Rizzo & L. Vasenelli

Authors
  1. C. Manfredotti
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. M. Mancini
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. R. Murri
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. Rizzo
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. L. Vasenelli
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

To speed up publication, the authors of this paper have agreed to not receive the proofs for correction.

Work partially supported by C.N.R.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Manfredotti, C., Mancini, A.M., Murri, R. et al. Electrical properties ofp-type GaSe. Nuovo Cim B 39, 257–268 (1977). https://doi.org/10.1007/BF02738193

Download citation

  • Received:

  • Revised:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02738193

Search

Navigation