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Oxygen diffusion through Al-doped amorphous SiO2

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Abstract

Oxygen (O) diffusion through pure and aluminum (Al)-doped amorphous silica is investigated by using secondary ion mass spectrometry to profile the diffusion of an18O tracer. The oxides are formed by the thermal oxidation of polymer-derived SiCN and SiAlCN ceramics. The authors demonstrate that a small amount of Al dopant can significantly inhibit both the interstitial and network diffusion of O. The activation energy of O network diffusion for Al-doped silica is two times higher than that for pure silica. The results are discussed in terms of the modification of Al doping on the network structure of the otherwise pure silica.

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Authors and Affiliations

  1. Advanced Materials Processing and Analysis Center (AMPAC) and Department of Mechanical, Materials and Aerospace Engineering, University of Central Florida, 32816, Orlando, FL

    Yiguang Wang, Yongho Sohn & Linan An

  2. Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 130032, Changchun, China

    Yi Fan & Ligong Zhang

Authors
  1. Yiguang Wang
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  2. Yongho Sohn
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  3. Linan An
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  4. Yi Fan
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  5. Ligong Zhang
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Wang, Y., Sohn, Y., An, L. et al. Oxygen diffusion through Al-doped amorphous SiO2 . JPED 27, 671–675 (2006). https://doi.org/10.1007/BF02736571

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  • DOI: https://doi.org/10.1007/BF02736571

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