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Copper diffusion into silicon substrates through TaN and Ta/TaN multilayer barriers

  • Section I: Basic And Applied Research
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Abstract

A study of copper (Cu) diffusion into silicon substrates through Ta nitride (TaN) and tantalum (Ta/TaN) layers was investigated based on an experimental approach. TaN x and Ta/TaN x thin films were deposited by radiofrequency sputtering under argon (Ar) and Ar-nitrogen (N) plasma. The influence of the N2 partial pressure on the microstructure and the electrical properties is reported. X-ray diffraction patterns showed that the increase of the N2 partial pressure, from 2 to 10.7%, induces a change in the composition of the δTaN phase, from TaN to TaN1.13, as well as an evolution of the dominant crystallographic orientation. This composition change is related to a drastic increase of the electrical resistivity over a N2 partial pressure of 7.3%. The efficiency of TaN layers and Ta/TaN multilayer diffusion barriers was investigated after annealing at temperatures between 600 and 900 °C in vacuum. Secondary ion mass spectrometry profiles showed that Cu diffuses from the surface layer through the TaN barrier from 600 °C. Cu diffusion mechanisms are modified in the presence of a Ta sublayer.

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References

  1. Z.J. Radzimski, W.M. Posadowski, S.M. Rossnagel, and S. Shingubara, Directional Copper Deposition Using dc Magnetron Self-sputtering,J. Vac. Sci. Technol., B, 1998,16(3), p 1102–1106

    Article  Google Scholar 

  2. J.R. Lloyd and J.J. Clement, Electromigration in Copper Conductors,Thin Solid Films, 1995,262(1–2), p 135–141

    Article  ADS  Google Scholar 

  3. T. Laurila, K. Zeng, J.K. Kivilahti, J. Molarius, and I. Suni, Chemical Stability of Ta Diffusion Barrier between Cu and Si,Thin Solid Films, 2000,373(1–2), p 64–67

    Article  ADS  Google Scholar 

  4. T. Oku, E. Kawakami, M. Uekubo, K. Takahiro, S. Yamaguchi, and M. Murakami, Diffusion Barrier Property of TaN between Si and Cu,Appl. Surf. Sci., 1996,99(4), p 265–272

    Article  ADS  Google Scholar 

  5. W.H. Lee, J.C. Lin, and C. Lee, Characterization of Tantalum Nitride Films Deposited by Reactive Sputtering of Ta in N2/Ar gas mixtures,Mater. Chem. Phys., 2001,68(1–3), p 266–271

    Article  Google Scholar 

  6. D.K. Kim, H. Lee, D. Kim, and Y.K. Kim, Electrical and Mechanical Properties of Tantalum Nitride Thin Films Deposited by Reactive Sputtering,J. Cryst. Growth, 2005,283(3–4), p 404–408

    Article  ADS  Google Scholar 

  7. T. Riekkinen, J. Molarius, T. Laurila, A. Nurmela, I. Suni, and J.K. Kivilahti, Reactive Sputter Deposition and Properties of TaxN Thin Films,Microelectron. Eng., 2002,64(1–4), p 289–297

    Article  Google Scholar 

  8. J.C. Lin and C. Lee, Growth of Tantalum Nitride Films on Si by Radio Frequency Reactive Sputtering of Ta in N2/Ar Gas Mixture: Effect of Bias,J. Electrochem. Soc., 2000,147(2), p 713–718

    Article  Google Scholar 

  9. L. Yu, C. Stampfl, D. Marshall, T. Eshrich, V. Narayanan, J.M. Rowell, N. Newman, and A.J. Freeman, Mechanism and Control of the Metal-to-insulator Transition in Rocksalt Tantalum Nitride,Phys. Rev. B: Condens. Matter, 2002,65(24), p 245110–1&2-245110-5

    ADS  Google Scholar 

  10. C.S. Shin, Y.W. Kim, D. Gall, J.E. Greene, and I. Petrov, Phase Composition and Microstructure of Polycrystalline and Epitaxial TaNx Layers Grown on Oxidized Si(001) and MgO(001) by Reactive Magnetron Sputter Deposition,Thin Solid Films, 2002,402(1–2), p 172–182

    Article  ADS  Google Scholar 

  11. D. Edelstein, C. Uzoh, J.C. Cabral, P. DeHaven, P. Buchwalter, A. Simon, E. Cooney, S. Malhotra, D. Klaus, H. Rathore, et al.,Materials Research Society Conference Proceedings, A.J. McKerrow, Y. Shacham-Diamand, S. Zaima, and T. Ohba, Ed., Oct 8–11, 2001 (Montreal, QC, Canada), Materials Research Society, 2002, p 541

  12. T. Nogami, Y.-C. Joo, S. Lopatin, J. Romero, J. Bernard, W. Blum, H.-J. Englmann, J. Gray, B. Tracy, S. Chen, et al.,Materials Research Society Conference Proceedings, G.S. Sandhu, H. Koerner, M. Murakami, Y. Yasuda, and N. Kobayashi, Ed., Oct 6–8, 1998 (Colorado Springs, CO), Materials Research Society, 1999, p 313

  13. K. Ishikawa, M. Miyauchi, H. Ashihara, T. Saitoh, U. Tanaka, T. Ohshima, K. Torii, S. Ishihara, H. Aoki, H. Yamaguchi, et al.,Materials Research Society Conference Proceedings, A.J. McKerrow, Y. Shacham-Diamand, S. Zaima, and T. Ohba, Ed., Oct 8–11, 2001 (Montreal, QC, Canada), Materials Research Society, 2002, p 487

  14. R. Hubner, M. Hecker, N. Mattern, V. Hoffmann, K. Wetzig, C. Wenger, H.J. Engelmann, C. Wenzel, E. Zschech, and J.W. Bartha, Structure and Thermal Stability of Graded Ta-TaN Diffusion Barriers Between Cu and SiO2,Thin Solid Films, 2003,437(1–2), p 248–256

    Article  ADS  Google Scholar 

  15. B.A. Movchan and A.V. Demchishin, Study of the Structure and Properties of Thick Vacuum Condensates of Nickel, Titanium, Tungsten, Aluminum Oxide, and Zirconium Oxide,Phys. Met. Metallogr., 1969,28, p 83–85

    Google Scholar 

  16. J.A. Thornton, The Microstructure of Sputter-deposited Coatings,J. Vac. Sci. Technol., A, 1986,4(6), p 3059–3065

    Article  ADS  Google Scholar 

  17. J.A. Thornton, Influence of Apparatus Geometry and Deposition Conditions on the Structure and Topography of Thick Sputtered Coatings,J. Vac. Sci. Technol., 1974,11(4), p 666–670

    Article  ADS  Google Scholar 

  18. S. Tsukimoto, M. Moriyama, and M. Murakami, Microstructure of Amorphous Tantalum Nitride Thin Films,Thin Solid Films, 2004,460(1–2), p 222–226

    Article  ADS  Google Scholar 

  19. J.R. Lloyd and S. Nakahara, Voids in Thin As-deposited Gold Films Prepared by Vapour Deposition,J. Vac. Sci. Technol., 1977,14(1), p 655–659

    Article  ADS  Google Scholar 

  20. S. Nakahara, Microporosity Induced by Nucleation and Growth Processes in Crystalline and Non-Crystalline Films,Thin Solid Films, 1977,45(3), p 421–432

    Article  ADS  Google Scholar 

  21. J.C. Lin, G. Chen, and C. Lee, Growth of Tantalum Nitride Films on Si by Radio Frequency Reactive Sputtering: Effect of N2/Ar Flow Ratio,J. Electrochem. Soc., 1999,146(5), p 1835–1839

    Article  Google Scholar 

  22. F. Shinoki and A. Itoh, Mechanism of rf Reactive Sputtering,J. Appl. Phys., 1975,46(8), p 3381–3384

    Article  ADS  Google Scholar 

  23. H.B. Nie, S.Y. Xu, S.J. Wang, L.P. You, Z. Yang, C.K. Ong, J. Li, and T.Y.F. Liew, Structural and Electrical Properties of Tantalum Nitride Thin Films Fabricated by Using Reactive Radio-Frequency Magnetron Sputtering,Appl. Phys. A, 2001,73(2), p 229–236

    Article  ADS  Google Scholar 

  24. M. Stavrev, D. Fischer, A. Preu, C. Wenzel, and N. Mattern, Study of Nanocrystalline Ta(N,O) Diffusion Barriers for Use in Cu Metallization,Microelectron. Eng., 1977,33, p 269–275

    Article  Google Scholar 

  25. G.S. Chen, P.Y. Lee, and S.T. Chen, Phase Formation Behavior and Diffusion Barrier Property of Reactively Sputtered Tantalum-based Thin Films Used in Semiconductor Metallization,Thin Solid Films, 1999,353(1–2), p 264–273

    Article  ADS  Google Scholar 

  26. T.B. Massalski, A.S.M.Binary Alloy Phase Diagrams, ASM International, 1996

  27. J. Gatterer, G. Dufek, P. Ettmayer, and R. Kieffer, The Cubic Tantalum Mononitride (B1) and Its Miscibility with the Isotype Mononitrides and Monocarbides of the 4a and 5a Group Metals,Monatsh. Chem., 1975,106, p 1137–1147

    Article  Google Scholar 

  28. W. Ensinger, M. Kiuchi, and M. Satou, Low-Temperature Formation of Metastable Cubic Tantalum Nitride by Metal Condensation Under Ion Irridiation,J. Appl. Phys., 1995,77(12), p 6630–6635

    Article  ADS  Google Scholar 

  29. W.L. Yang, W.F. Wu, D.G. Liu, C.C. Wu, and K.L. Ou, Barrier Capability of TaNx Films Deposited by Different Nitrogen Flow Rate Against Cu Diffusion in Cu/TaNx/n+−p Junction Diodes,Solid-State Electron., 2001,45(1), p 149–158

    Article  ADS  Google Scholar 

  30. M. Hecker, D. Fischer, V. Hoffmann, H.J. Engelmann, A. Voss, N. Mattern, C. Wenzel, C. Vogt, and E. Zschech, Influence of N Content on Microstructure and Thermal Stability of Ta-N Thin Films for Cu Interconnection,Thin Solid Films, 2002,414(2), p 184–191

    Article  ADS  Google Scholar 

  31. X. Sun, E. Kolawa, J. Chen, J. Reid, and M.A. Nicolet, Properties of Reactively Sputter-deposited Ta-N Thin Films,Thin Solid Films, 1993,236(1–2), p 347–351

    Article  ADS  Google Scholar 

  32. M. Seibt, H. Hedemann, A. Istratov, F. Riedel, A. Sattler, and W. Schröter, Structural and Electrical Properties of Metal Silicide Precipitates in Silicon,Phys. Status Solidi A, 1999,171(1), p 301–310

    Article  ADS  Google Scholar 

  33. T. Laurila, K. Zeng, J.K. Kivilahti, J. Molarius, and I. Suni, Chemical Stability of Ta Diffusion Barrier between Cu and Si,Thin Solid Films, 2000,373(1–2), p 64–67

    Article  ADS  Google Scholar 

  34. X. Yan and Y.A. Chang, A Thermodynamic Analysis of the Cu-Si System,J. Alloys Compd., 2000,308(1–2), p 221–229

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Laboratoire de Physicochimie de la Matière Condensée cc 003, Université de Montpellier II, place Eugène Bataillon, 34095, Montpellier Cedex 5, France

    N. Fréty, F. Bernard, J. Nazon, J. Sarradin & J. C. Tedenac

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Fréty, N., Bernard, F., Nazon, J. et al. Copper diffusion into silicon substrates through TaN and Ta/TaN multilayer barriers. JPED 27, 590–597 (2006). https://doi.org/10.1007/BF02736560

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  • DOI: https://doi.org/10.1007/BF02736560

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