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Universal regularities of charged carrier transfer in disordered materials

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Abstract

The temperature dependences of the conductivity have been analyzed for a number of disordered materials (amorphous compounds, glasses, polycrystalline and pressed composite materials, etc.). It is shown that these dependences are usually described by the inverse Arrhenius law for nonpolar semiconductors and by the power law for polar materials. A model is proposed within which the universality of these laws for the conductivity is explained by the exponential form of the density of states near the Fermi level or in the range of the allowed band tails. This form of density-of-state function is observed for a large number of disordered materials with different nature. In the framework of the model, the conductivity obeys the inverse Arrhenius law upon one-phonon electron transitions between states and the power law upon multiphonon transitions. The corollaries following from the model proposed are considered.

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References

  1. Mott, N.F. and Davis, E.A.,Electron Processes in Non- Crystalline Materials, Oxford (UK): Clarendon, 1979. Translated under the titleElektronnye protsessy v nekri- stallicheskikh veshchestvakh, Moscow: Mir, 1982, vol. 1; 1983, vol. 2.

    Google Scholar 

  2. Golikova, O.A. and Samatov, S.,Bor i ego poluprovod- nikovye soedineniya (Boron and Its Semiconductor Compounds), Tashkent: Fan, 1982.

    Google Scholar 

  3. Golikova, O.A., Amandzhanov, N., and Tadzhiev, A.A., Electrical Properties of Solid Solutions Based on β-Rhombohedral Boron,Izv. Akad. Nauk UzSSR, Sen Fiz--Mat. Nauk, 1989, no. 2, pp. 85–88.

  4. Nasibov, I.O., Sultanov, G.I., Murguzov, M.I., and Sha- fagatova, G.G., Physicochemical and Electrophysical Properties of (PR2Se3)/PbSe)1 -x (x < 0.05) Solid Solutions,Izv. Akad. Nauk SSSR, Neorg. Mater., 1989, vol. 25, no. 4, pp. 556–558.

    CAS  Google Scholar 

  5. Gudaev, O.A., Malinovsky, V.K., Paul, E.E., and Treshikhin, V.A., Nonactivation Nature of Conductivity in Disordered Materials,Solid State Commun., 1990, vol. 74, no. 10, pp. 1169–1173.

    Article  CAS  Google Scholar 

  6. Pramanik, P., Biswas, S., Basu, P.K. and Mondai, A., A Chemical Method for the Deposition of Semiconducting Lead Selenide Thin Films,J. Mater. Sci. Lett, 1990, vol. 9, no. 10, pp. 1120–1122.

    Article  CAS  Google Scholar 

  7. Sokolenko, G.A., Botov, F.A., Buinov, L.L.,et al, Temperature and Frequency Dependences of Electric Conductivity for Diamond Films,Fiz. Tekh. Poluprovodn. (Leningrad), 1990, vol. 24, no. 1, pp. 175–180.

    Google Scholar 

  8. Bakirov, M.Ya., Nayafov, B.A., Mamedov, V.S., and Modatov, B.S., Electrical and Optical Properties of Amorphous Ge1-x-Six. Semiconductors,Phys. Status Solidi A, 1989, vol. 114, pp. K45-K48.

    Article  CAS  Google Scholar 

  9. Mikolaichuk, A.G., Yatsishin, S.P., Baitsar, A.S., and Yatsishin, B.P., Electrical Properties of Amorphous Films Deposited in Fields,Dokl. Akad. Nauk Ukr. SSR,Ser. A, 1989, no. 11, pp. 58–60.

  10. Mihai, I.C. and Muller, H.P., Electrical Properties and Optical Absorption of Amorphous Bi-Se Alloys,Trudy VI Mezhdunarodnoi konferentsii po amorfnym i zhidkim poluprovodnikam (Proc. VI Int. Conf. on Amorphous and Liquid Semiconductors) (Leningrad, 1976), Lenin- grad: Nauka, 1976, pp. 411–415.

    Google Scholar 

  11. Guintini, J.C., Granier, W., Zanchetta, J.V. and Taha, A., Sol-Gel Preparation and Transport Properties of Tin Oxide,J. Mater. Sci. Lett., vol. 9, no. 12, pp. 1383–1385.

  12. Satich Vita, Structure and Temperature Dependence of Conductivity of Ag2.5Se-SeJ. Appl. Phys., 1990, vol. 68, no. 7, pp. 3413–3417.

    Article  Google Scholar 

  13. Moser, E. and Pearson, W., Chemical Bonding in Semiconductors, inPoluprovodnikovye veshchestva (Semiconductor Materials), Moscow: Inostrannaya Literatura, 1960, pp. 134–158.

    Google Scholar 

  14. Kulikov, G.S., Mezdrogina, M.M., Persheev, S.K., and Abdurakhmanov, K.P., Amorphous Hydrogenated Sili- con Doped with Dysprosium,Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1993, vol. 27, no. 8, pp. 1389–1392.

    Google Scholar 

  15. Kulikov, G.S., Mezdrogina, M.M. and Persheev, S.K., Diffusion Silver Doping of Amorphous Hydrogenated Silicon with Boron Impurity,Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1993, vol. 27, no. 8, pp. 1392–1394.

    CAS  Google Scholar 

  16. Oheda, H., Drift Mobility under In-Plane Conduction in Hydrogenated Amorphous Silicon Nipi Multilayers,J.Non-Cryst. Solids, 1991, vols. 137–138, pp. 1147- 1150.

    Article  CAS  Google Scholar 

  17. Amorphous Semiconductors, Brodsky, M.H., Ed., Heidelberg: Springer-Verlag, 1979. Translated under the titleAmorfnye poluprovodniki, Moscow: Mir, 1982.

    Google Scholar 

  18. Shimakava, K., On the Mechanism of d.c. and a.c. Transport in Transition Metal Oxide Glasses,Philos. Mag. B, 1989, vol. 60, no. 3, pp. 377–389.

    Article  Google Scholar 

  19. Solodukha, A.M. and Zhukov, O.K., Electric Conductivity in Thin Amorphous Layers of Weakly Reduced Tungsten Trioxide,Izv. Akad. Nauk SSSR, Neorg. Mater., 1989, vol. 25, no. 1, pp. 162–164.

    Google Scholar 

  20. Kalygina, V.M., Gaman, V.l., Filatova, I.V., Baba- enko, G.A. and Koltun, V.l., Ac and dc Electric Conductivity of Glasses in the V2O5-PbO System,Fiz. Khim. Stekla, 1990, vol. 16, no. 3, pp. 392–396.

    CAS  Google Scholar 

  21. Golikova, O.A. and Kazanin, M.M., Modified Aluminum Doped α-B12,Phys. Status Solidi A, 1987, vol. 103, pp. K41-K43.

    Article  CAS  Google Scholar 

  22. Evans, B.L. and Nasser, G.Y., Non-Radiative Transitions,Phys. Status Solidi A, 1988, vol. 110, no. 1, pp. 165–179.

    Article  CAS  Google Scholar 

  23. Tarsikka, P.S. and Singh, B., Dc and ac Conductivity of Sodium-Molybdenum Phosphato Glasses,J. Non-Cry st. Solids, 1990, vol. 124, nos. 2–3, pp. 221–228.

    Article  CAS  Google Scholar 

  24. Bonch-Bruevich, V.L. and Kalashnikov, S.G.,Fizika poluprovodnikov (Physics of Semiconductors), Moscow: Nauka, 1977.

    Google Scholar 

  25. Bonch-Bruevich, V.L., Zvyagin, I.P., Kiper, R., Mironov, A.G., Enderline, R. and Esser, B.,Elektron- naya teoriya neuporyadochennykh poluprovodnikov (Electron Theory of Disordered Semiconductors), Mos-cow: Nauka, 1981.

    Google Scholar 

  26. Robertson, N. and Fridman, L., Non-Radiative Transi- tions,Philos. Mag. B, 1976, vol. 33, no. 5, pp. 753–774.

    Article  CAS  Google Scholar 

  27. Gudaev, O.A. and Malinovsky, V.K., Electric Conductiv- ity of Disordered Materials upon Multiphonon Transi- tions,Fiz. Tverd. Tela (S.-Peterburg), 1992, vol. 34, no. 2, pp. 548–553.

    CAS  Google Scholar 

  28. Kimura, K., Tada, T., Hori, A. and Furukava, A., Optical Absorption Edge and Photoluminescence Spectra in Amorphous and Crystalline Boron-Rich Solids,J Non- Cryst. Solids, 1991, vols. 137–138, pp. 919–922.

    Article  CAS  Google Scholar 

  29. Jackson, U. and Cacalios, J., Formation Kinetics of Metastable Defects Induced by Carriers in Hydroge- nated Amorphous Silicon, inAmorphous Silicon and Related Materials, Fritzsche, H., Ed., Singapore: World Scientific, 1989. Translated under the titleAmorfnyi kremnii i rodstvennye materialy, Moscow: Mir, 1991.

    Google Scholar 

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Author notes

  1. O. A. Gudaev & V. K. Malinovsky

    Present address: Institute of Automatics and Electrometry, Siberian Division, Russian Academy of Sciences, pr. Koptyuga 1, 630090, Novosibirsk, Russia

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    1. O. A. Gudaev
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    2. V. K. Malinovsky
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    Gudaev, O.A., Malinovsky, V.K. Universal regularities of charged carrier transfer in disordered materials. Glass Phys Chem 26, 364–372 (2000). https://doi.org/10.1007/BF02732001

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