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On the nature of defects and mechanism of their formation in thin borophosphosilicate glass layers produced by vapor deposition upon fabrication of integrated circuits

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Abstract

The data on the defects formed in vapor-deposited thin borophosphosilicate glass layers upon their interaction with surrounding atmosphere are analyzed. The formation, growth, and evolution of defects in glasses are studied. The classification of defects is proposed, and the concentration ranges of the existence of the specified defects are determined. The nature of defects in the borophosphosilicate glass layers is discussed, and the mechanism of their formation is advanced.

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  1. V. Yu. Vasil’ev

    Present address: Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. akademika Lavrent’eva 13, 630090, Novosibirsk, Russia

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    Vasil’ev, V.Y. On the nature of defects and mechanism of their formation in thin borophosphosilicate glass layers produced by vapor deposition upon fabrication of integrated circuits. Glass Phys Chem 26, 93–103 (2000). https://doi.org/10.1007/BF02731949

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    • DOI: https://doi.org/10.1007/BF02731949

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