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Modelling of transport phenomena and defects in crystal growth processes

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Abstract

A brief review of single crystal growth techniques and the associated problems is presented Emphasis is placed on models for various transport and defect phenorrem involved in the growth proces with the ultimate aim of intergrating them into a comprehensive mumerical model. The sources of dislocation nucleation in the growing erystal are discussed, and the propagation and multiplacation of these under the action of thermal stresses is discussed. A brief description of a high-level numerical technique based on multiple adaptive grid generation and finite volume diseretization is presented, followed by the result of a representative numerical simulation.

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Authors and Affiliations

  1. Consortium for Crystal Growth Research, Department of Mechanical Engineering, State University of New York at Stony Brook, 11794-2300, Stony Brook, NY, USA

    S. Pendurti, H. Zhang & V. Prasad

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  1. S. Pendurti
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  2. H. Zhang
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Pendurti, S., Zhang, H. & Prasad, V. Modelling of transport phenomena and defects in crystal growth processes. Sadhana 26, 71–101 (2001). https://doi.org/10.1007/BF02728480

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