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X-ray photoemission spectroscopy of O(1s) chemisorbed on Si and Ge surfaces

Спектроскопия рентгеновской фотоэмиссии кислорода (1s), хемосорбированного на поверхностях Si и Ge

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Il Nuovo Cimento B (1971-1996)

Summary

The submonolayer oxidation of Si and Ge has been investigated by X-ray photoemission spectroscopy. In the case of silicon the results support a nondissociative chemisorption of the O2 molecule.

Riassunto

Si è studiata l’ossidazione di submonostrati di Si e Ge mediante la spettroscopia di fotoemissione a raggi X. Nel caso del silicio i risultati sono a favore di un chemi-assorbimento non dissociativo della molecola di O2.

Резюме

С помощью спектроскопии рентгеновской фотоэмиссии исследуется окисление субмонослоя Si и Ge. В случае кремния полученные результаты подтверждают недиссочативную хемосорбцию молекулы O2.

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Footnotes

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Author notes

  1. G. Margaritondo (Fellow of the Italian National Research Council, G.N.S.M.), J. E. Rowe & S. B. Christman

    Present address: Bell Laboratories, 07974, Murray Hill, N. J.

Authors and Affiliations

    Authors
    1. G. Margaritondo
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    2. J. E. Rowe
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    3. S. B. Christman
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    Additional information

    Traduzione a cura della Redazione.

    Перевебено ребакцуей.

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    Margaritondo, G., Rowe, J.E. & Christman, S.B. X-ray photoemission spectroscopy of O(1s) chemisorbed on Si and Ge surfaces. Nuov Cim B 39, 781–785 (1977). https://doi.org/10.1007/BF02725823

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    • DOI: https://doi.org/10.1007/BF02725823

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