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Studies of bulk and surface states of cubic II–VI semiconductors using synchrotron radiation

Исследование объемных и поверхностных состояний кубических II–VI полупроводников, используя синхротронное излучение

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Il Nuovo Cimento B (1971-1996)

Summary

ZnS, ZnSe, ZnTe and CdTe have been studied by means of angle-integrated and angle-resolved photoemission and partial-photoyield spectroscopy. The presence of an occupied surface state band lying at the top of the valence band has been shown as well as the presence of empty surface states.

Riassunto

Si sono studiati i composti ZnS, ZnSe, ZnTe e CdTe per mezzo della fotoemissione risolta rispetto all’angolo e integrata rispetto all’angolo e della spettroscopia del fotorisultato parziale. Si è mostrata la presenza di una banda di stato della superficie occupata e giacente al sommo della banda di valenza, così pure la presenza di stati della superficie vuoti.

Резюме

Исследуются соединения ZnS, ZnSe, ZnTe и CdTe, используя фотоэмиссию, проинтегрированную по углам и разрешенную по углам, а также парциальную спектроскопию фотоэмиссии. Было показано существование заполненной зоны поверхностных состояний, расположенной в верхней части валентной зоны, а также существование незаполненных поверхностных состояний.

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Footnotes

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Author notes

  1. R. Z. Bachrach, R. S. Bauer & J. C. McMenamin

    Present address: Xerox Palo Alto Research Center, 94304, Palo Alto, Cal.

  2. S. A. Flodstrom

    Present address: Linkoping University, Linkoping, Sweden

Authors and Affiliations

  1. Xerox Palo Alto Research Center, 94304, Palo Alto, Cal.

    S. A. Flodstrom

Authors
  1. R. Z. Bachrach
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  2. R. S. Bauer
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  3. S. A. Flodstrom
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  4. J. C. McMenamin
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Traduzione a cura della Redazione.

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Bachrach, R.Z., Bauer, R.S., Flodstrom, S.A. et al. Studies of bulk and surface states of cubic II–VI semiconductors using synchrotron radiation. Nuov Cim B 39, 704–708 (1977). https://doi.org/10.1007/BF02725813

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  • DOI: https://doi.org/10.1007/BF02725813

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