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High-pressure effects in layer semiconductors

Эффекты высоких давлений в слоистых полупроводниках

  • Published:
Il Nuovo Cimento B (1971-1996)

Summary

High-pressure effects on some layered semiconductors are reviewed. Pressure coefficients are compared with band structure calculations. Examples of application of high-pressure data to the investigation of basic parameters in lamellar crystals are given. Vibrational properties under pressure are discussed.

Riassunto

Si riesaminano gli effetti dell’alta pressione su semiconduttori stratificati. Si confrontano i coefficienti di pressione con i calcoli delle strutture di banda. Si danno esempi dell’applicazione dei dati ad alta pressione alla ricerca di parametri di base in cristalli lamellari. Si discutono le proprietà vibrazionali sotto pressione.

Резюме

Анализируется влияние высокого давления на слоистые полупроводники. Коэффициенты давления сраваются с вычислениями зонной структуры. Приводятся примеры применения данных по высокому давлению к исследованию основных параметров в слоистых кристаллах. Обсуждаются вибрационные свойства при наличии давления.

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Authors and Affiliations

  1. Laboratoire de Physique des Solides (Associé au CNRS), Université Pierre et Marie Curie, 4 Place Jussieu, 75230, Paris Cedex 05

    J. M. Besson

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  1. J. M. Besson
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Traduzione a cura della Redazione.

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Besson, J.M. High-pressure effects in layer semiconductors. Nuov Cim B 38, 478–485 (1977). https://doi.org/10.1007/BF02723520

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  • DOI: https://doi.org/10.1007/BF02723520

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