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Current-voltage studies on β-FeSi2/Si heterojunction

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Abstract

I-V characteristics of both β-FeSi2/n-Si and β-FeSi2/p-Si were studied at room temperature. The junctions were formed by depositing Fe on Si selectively followed by thermal annealing and some samples were later treated by pulsed laser. Temperature of thermal annealing and diode area were also varied.I-V studies on all these samples were done and ideality factors were computed. Results obtained were interpreted.

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Authors and Affiliations

  1. Materials Science Centre, Indian Institute of Technology, 721 302, Kharagpur, India

    A. Datta, S. Kal & S. Basu

  2. Department of Electronics & ECE, Indian Institute of Technology, 721 302, Kharagpur, India

    S. Kal

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  1. A. Datta
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  2. S. Kal
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  3. S. Basu
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Datta, A., Kal, S. & Basu, S. Current-voltage studies on β-FeSi2/Si heterojunction. Bull Mater Sci 23, 331–334 (2000). https://doi.org/10.1007/BF02720092

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  • DOI: https://doi.org/10.1007/BF02720092

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