Abstractr
To study the transient point defect distribution in Czochralski-grown silicon single crystals, a continuum model of point defect dynamics to predict the concentration of interstitial and vacancy is established by estimating expressions for the thermo-physical properties of point defects and the point defect distribution in silicon crystals. It is well known that the concentration of intrinsic point defects in growing silicon crystals is a function of the crystal pull rate (V) and the temperature gradient (G) at the solidification interface inside the crystal, and steady state predictions from point defect dynamics are well agreed with experiment. In this study, finite element simulations have been performed for the growth halt experiment with 150 mm silicon single crystals to study the transient behavior of intrinsic point defects. It has been demonstrated that predicted point defect distributions are in good agreement with experimental results.
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References
Ammon, W., Dornberger, E., Oelkrug, H. and Weidner, H., “The Dependence of Bulk Defects on the Axial Temperature Gradient of Silicon Crystals during Czochralski Growth,”J. Cryst. Growth,151, 273 (1995).
Brown, R. A., Maroudas, D. and Sinno, T., “Modelling Point Defect Dynamics in the Crystal Growth,”J. Cryst. Growth, 137, 12 (1994).
Dornberger, E. and Ammon, W., “The Dependence of Ring-Like Distributed Stacking Faults on the Axial Temperature Gradient of Growing Czochralski Silicon Crystals,”J. Electrochem. Soc.,143, 1648 (1996).
Hasebe, M., Takeoka, Y., Shinoyama, S. and Naito, S., “Formation Process of Stacking Faults with Ringlike Distribution in CZ-Si Wafers,”Jpn. J. Appl. Phys.,28, L1999 (1989).
Kim, K. H., Choi, I. S., Wang, J. H. and Lee, H. W., "Transient Behavior of Point Defect in CZ Silicon Crystals,”Theories and Applications of Chem. Eng.,8, 5190 (2002).
Lynch, D. R. and Gray, W. G., “Finite Element Simulation of Flow in Deforming Regions,”J. Comput. Phys., 36, 135 (1980).
Sinno, T., Brown, R. A., Ammon, W. and Dornberger, E., “On the Dynamics of the Oxidation-induced Stacking Fault Ring in as-grown Czochralski Silicon Crystals”,Appl. Phys. Lett., 70, 2250 (1997).
Sinno, T., Brown, R. A., Ammon, W. and Dornberger, E., “Point Defect Dynamics and the Oxidation-induced Stacking-fault Ring in Czochralski-grown Silicon Crystals,”J. Electrochem. Soc.,145, 302 (1998).
Voronkov, V. V., “The Mechanism of Swirl Defects Formation in Silicon,”J. Cryst. Growth,59, 625 (1982).
Voronkov, V. V. and Falster, R., “Vacancy-type Microdefect Formation in Czochralski Silicon,”J. Cryst. Growth, 194, 76 (1998).
Wang, J. H., Kim, D. H. and Chung, D.-S., “Analysis of Moving Boundary Problem of Growth of Bismuth Germanate Crystal by Heat Exchanger Method,”Korean J. Chem. Eng., 13, 503 (1996).
Wang, J. H., Kim, D. H. and Yoo, H.-D., “Two-Dimensional Analysis of Axial Segregation in Batchwise and Continuous Czochralski Process,”J. Cryst. Growth, 198/199, 120 (1999).
Wang, J. H., Oh, H. J. and Yoo, H.-D., “Numerical Analysis for the Dynamics of the Oxidation-Induced Stacking Fault in Czochralski-Grown Silicon Crystals”,KoreanJ. Chem. Eng.,18, 81 (2001).
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Wang, J.H., Im, JI. & Lee, KH. Numerical analysis for transient point defect behavior in Czochralski silicon crystal growth. Korean J. Chem. Eng. 21, 1231–1234 (2004). https://doi.org/10.1007/BF02719499
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DOI: https://doi.org/10.1007/BF02719499