Abstract
Three-dimensional integrated circuit technology with transistors stacked on top of one another in multi-layer silicon film has always been a vision in the future technology direction. While the idea is simple, the technique to obtain high performance multi-layer transistors is extraordinarily difficult. Not until recently does such technology become feasible. In this paper, the background and various techniques to form three-dimensional circuits will be reviewed. Recent development of a simple and promising technology to achieve three-dimensional integration using Metal-Induced-Lateral-Crystallization will be described. Preliminary results of 3D inverters will also be provided to demonstrate the viability for 3D integration.
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Chan, M., Ko, P.K. Development of a viable 3D integrated circuit technology. Sci China Ser F 44, 241–248 (2001). https://doi.org/10.1007/BF02714712
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DOI: https://doi.org/10.1007/BF02714712