Bulletin of Materials Science

, Volume 28, Issue 1, pp 49–54

Oriented growth of thin films of samarium oxide by MOCVD

Thin Films

DOI: 10.1007/BF02711172

Cite this article as:
Shalini, K. & Shivashankar, S.A. Bull Mater Sci (2005) 28: 49. doi:10.1007/BF02711172


Thin films of Sm2O3 have been grown on Si(100) and fused quartz by low-pressure chemical vapour deposition using an adducted β-diketonate precursor. The films on quartz are cubic, with no preferred orientation at lower growth temperatures (∼ 550°C), while they grow with a strong (111) orientation as the temperature is raised (to 625°C). On Si(100), highly oriented films of cubic Sm2O3 at 625°C, and a mixture of monoclinic and cubic polymorphs of Sm2O3 at higher temperatures, are formed. Films grown on either substrate are very smooth and fine-grained. Infrared spectroscopic study reveals that films grown above 600° C are free of carbon.


MOCVD thin films β-diketonate samarium oxide gate dielectric 

Copyright information

© Indian Academy of Sciences 2005

Authors and Affiliations

  1. 1.Materials Research CentreIndian Institute of ScienceBangaloreIndia

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