Shalini, K. & Shivashankar, S.A. Bull Mater Sci (2005) 28: 49. doi:10.1007/BF02711172
Thin films of Sm2O3 have been grown on Si(100) and fused quartz by low-pressure chemical vapour deposition using an adducted β-diketonate precursor. The films on quartz are cubic, with no preferred orientation at lower growth temperatures (∼ 550°C), while they grow with a strong (111) orientation as the temperature is raised (to 625°C). On Si(100), highly oriented films of cubic Sm2O3 at 625°C, and a mixture of monoclinic and cubic polymorphs of Sm2O3 at higher temperatures, are formed. Films grown on either substrate are very smooth and fine-grained. Infrared spectroscopic study reveals that films grown above 600° C are free of carbon.
MOCVD thin films β-diketonate samarium oxide gate dielectric