Summary
The Ohmic mobility of holes in silicon is theoretically evaluated for the case of lattice scattering from 40 °K to 400 °K. The increase of the hole effective mass with temperature, due to the nonparabolicity of the silicon valence band, has been taken into account. From the fit to the experimental data it has been found that in the deformation potential approximation the acoustic mode is the predominant one in the temperature range considered, and that nonparabolicity influences the Ohmic mobility at 300 °K by about 32 per cent.
Riassunto
Si calcola teoricamente la mobilità ohmica delle lacune nel silicio fra 40 °K e 400 °K tenendo conto dello scattering reticolare. È stato tenuto conto dell’aumento con la temperatura della massa efficace delle lacune a causa della nonparabolicità della banda di valenza del silicio. Dall’accordo con i dati sperimentali è stato trovato che nell’approssimazione del potenziale di deformazione i modi acustici sono predominanti nell’intervallo di temperature considerato, e che la nonparabolicità influisce sulla mobilità ohmica a 300 °K per circa il 32 per cento.
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Costato, M., Reggiani, L. Ohmic mobility of holes in silicon. Nuovo Cimento B (1965-1970) 68, 64–74 (1970). https://doi.org/10.1007/BF02710359
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DOI: https://doi.org/10.1007/BF02710359