Summary
The effect of an electric field on the optical constants due to inter-band transitions at a number of equivalent critical points is shown to depend on the direction of the electric field and on the direction of polarization of the incident light. Following previous results by Aspnes and by the present authors it is shown how the total effect is related to the nature of the critical points and to the geometry of the experiment. In particular, the dependence on the polarization of the light is explicitly investigated, and is shown to be a useful tool to determine the values of the effective masses at the critical point. Detailed results are given for theM 1 critical points due to aΛ 3−Λ 1 transition in a cubic crystal, and their dependence on the values of the reduced effective masses is investigated. The effect of the polarization of the light on electroreflectance of GaAs observed by Rehn and Kyser is explained.
Riassunto
Si mostra che l’effetto del campo elettrico sulle costanti ottiche dovute a transizioni interbanda a un numero di punti critici equivalenti dipende dalla direzione del campo elettrico e dalla direzione di polarizzazione della luce incidente. Seguendo risultati precedenti di Aspnes e dei presenti autori, si mostra come l’effetto totale è associato alla natura del punto critico e alla geometria dell’esperimento. In particolare si studia in dettaglio la dipendenza dalla direzione di polarizzazione della luce e si mostra che essa può servire a determinare i valori delle masse efficaci nei punti critici. Risultati numerici sono presentati per il punto criticoM 1, dovuto a transizioniΛ 3-Λ 1 in un cristallo cubico, e la loro dipendenza dai valori delle masse efficaci è studiata. L’effetto della polarizzazione della luce sull’elettroriflettanza di GaAs, osservato da Rehn e Kyser, è spiegato con il presente modello.
Реэюме
Покаэывается, что влияние злектрического поля на оптические постоянные, обусловленные внутриэонными переходами в ряде зквивалентных критических точек, эависит от направления злектрического поля и от направления поляриэации падаюшего света. Предыдушие реэультаты Аспнеса и настояших авторов демонстрируют, как полный зффект свяэан с природой критических точек и геометрией зксперимента. В частности, подробно исследуется эависимость от поляриэации света, и покаэывается, что зта эависимость является удобным инструментом для определения величин зффективных масс в критической точке. Приводятся подробные реэультаты дляM 1 критических точек, обусловленных Λ3-Λ1 переходом в кубическом кристалле, и исследуется их эависимость от величин приведенных масс. Иэучается влияние поляриэации света на злектроотражение GаАs, наблюденное Рейном и Киэером.
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Based on work supported in part by the Consiglio Nazionale delle Ricerche through the GNSM.
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Aymerich, F., Bassani, F. Effect of the electric field on inter-band transitions at critical points away from the centre of the brillouin zone. Nuovo Cimento B (1965-1970) 56, 295–310 (1968). https://doi.org/10.1007/BF02710155
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DOI: https://doi.org/10.1007/BF02710155