Abstract
Schottky barriers of Ag, Al, Ni-(n)CdTe structures have been prepared and studied. The films were prepared by rf sputtering and doped with Cd metal. Diode ideality factor of these junctions are greater than unity and barrier height varies from 0.6–0.7 eV and are affected by room illumination. Photovoltaic effect of these junctions was very poor and fill factor below 0.4. Low doping concentration, high defect density, presence of an interfacial layer and presence of high series resistance are perceived to affect theJ—V characteristic.
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Sarmah, P.C., Rahman, A. Current-voltage characteristics of Ag, Al, Ni-(n)CdTe junctions. Bull Mater Sci 24, 411–414 (2001). https://doi.org/10.1007/BF02708640
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DOI: https://doi.org/10.1007/BF02708640